ASML Lithography Machines， Latest Progress

ASML Lithography Machines， Latest Progress

At SEMICON West, the author of this article interviewed Mike Lercel from ASML. In this piece, the author combines information from ASML demonstrations at the SPIE Advanced Lithography Conference, Mike's presentations at SEMICON, discussions with Mike during SEMICON, and some content from ASML's recent financial earnings conference call. The goal is to share the latest developments in ASML's lithography machines.

DUV

ASML continues to improve its Deep Ultraviolet (DUV) systems. The new NXT:2100i introduces four new features aimed at improving overlay and edge placement errors for future logic and DRAM.

A distortion manipulator for improved lens and cross-matching provides more overlay correction control.

Adjusted mask libraries and new mask heating control enhance mask coverage and throughput.

PARIS optical sensors improve coverage effects.

Alignment in two colors also enhances overlay effects.

The result is improved matching coverage to well below 1.3 nanometers for machine matching and slightly above 1.1 nanometers for cross-matching (see Figure 1).

                                Figure 1. Matching layer coverage.

0.33NA EUV

From the recently completed quarterly financial conference call, ASML has shipped over 200 NXE:3400/3600 systems. According to the author's calculations, this includes 45 NXE:3400B, 76 NXE:3400C, and 75 NXE:3600D. The statistics may be incomplete due to delays between shipments and sales data. However, it is expected that NXE:3600D either is or will soon become the most shipped system.

From the first quarter of 2014 to the fourth quarter of 2019, system throughput increased over 17 times! NXE:3400C achieved approximately 140 wafers per hour (wph) at a dose of 30mJ/cm2 on-site, while NXE:3600D achieved slightly over 160 wph on-site and 185 wph at ASML with a dose of 30mJ/cm2. The target for NXE:3800E is >220 wph (see Figure 2).

                     Figure 2. EUV system throughput.

NXE production has steadily increased. In 2020, only one system globally achieved an annual output of over 500,000 wafers, increasing to 15 in 2021 and 51 in 2022 (see Figure 3).

                                Figure 3. EUV system productivity.

The target for NXE:3800E is >220 wph with a machine matching coverage of 0.9nm (see Figure 4).

                                    Figure 4. NXE:3800E target.

The first batch of NXE:3800E is expected to be shipped in the fourth quarter (see Figure 5).

                             Figure 5. NXE:3800E shipping status.

A significant challenge for EUV has been the massive power consumption of the systems. ASML has consistently improved energy efficiency, reducing energy consumption per wafer by three times (see Figure 6).

                                Figure 6. EUV energy efficiency.

The 0.33NA EUV system is now firmly established as the preferred tool for critical layers in advanced logic and DRAM components, with more layers transitioning to EUV with each new node.

High Numerical Aperture (NA) EUV

Single exposure patterning for the 0.33NA EUV system has reached approximately 30nm, with further improvements expected as the process matures. Some EUV multipatterning has already been employed for 5nm and 3nm logic processes. Tools with higher numerical apertures can improve the achievable single exposure pitch limits.

The first 0.55NA EUV system, EXE:5000, is scheduled to be shipped in early 2024 and enter mass production in 2025. EXE:5000 is a development system with limited quantities (see Figure 7).

                                                Figure 7. EXE:5000 status.

Later in 2023, ASML's factory in Veldhoven will collaborate with imec to establish a High NA EUV Demonstration Lab, scheduled to operate in early 2024.

Mass production of the high numerical aperture exposure tool, EXE:5200, is expected to begin in early 2025.

Hyper NA EUV

If the pitch continues to shrink, even a 0.55NA High NA exposure tool will eventually require multipatterning. ASML is seriously considering a "Hyper NA" tool with an NA of around 0.75NA, but the specific NA has yet to be determined. A key question is when or if such a tool will be needed.

Conclusion

ASML continues its relentless improvement plans for its product line. Faster, more precise DUV and 0.33NA EUV tools are in development. The 0.55NA High NA EUV tool is set to be launched, surpassing High NA and potentially leading to tools with Super NA capabilities.