Thickness Up To 100 Mm! New Progress in Silicon Carbide Single Crystal Growth Achieved.

Recently, according to the official WeChat account of Zhejiang University Hangzhou International Science and Technology Innovation Center, the Advanced Semiconductor Research Institute-Qianjing Semiconductor Joint Laboratory at Zhejiang University Hangzhou International Science and Technology Innovation Center (referred to as the Innovation Center) has successfully grown ultra-thick silicon carbide single crystals with a thickness of up to 100 mm for the first time. It is understood that to reduce the cost of silicon carbide substrates, the key lies in starting from silicon carbide single crystals; to significantly increase the thickness of silicon carbide single crystals, it is necessary to solve difficult problems such as temperature gradient and stress control in crystal growth.

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To address these challenges, the joint laboratory employed the Pulling Physical Vapor Transport (PPVT) method and successfully grew silicon carbide single crystals with a diameter of 6 inches (equivalent to 150 mm), surpassing a thickness of 100 mm.

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According to the results of testing and processing of the substrate, the ultra-thick silicon carbide single crystal exhibits a single 4H crystal structure with excellent crystalline quality, with an average resistivity not exceeding ∼ 30 mΩ·cm. Currently, the research team has applied for two invention patents related to this work. In addition, in May of last year, the joint laboratory made breakthroughs in the growth of large-size silicon carbide (SiC) single crystals and their substrate preparation through a series of technical challenges. According to the results of testing and processing of the substrate, the ultra-thick silicon carbide single crystal exhibits a single 4H crystal structure with excellent crystalline quality, with an average resistivity not exceeding ∼ 30 mΩ·cm. Currently, the research team has applied for two invention patents related to this work. In addition, in May of last year, the joint laboratory made breakthroughs in the growth of large-size silicon carbide (SiC) single crystals and their substrate preparation through a series of technical challenges.

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The joint laboratory proposed a multi-stage resistance heating strategy for the PVT method, and simultaneously conducted research and development on the thermal field and process means for growing 8-inch silicon carbide single crystals, combining numerical simulation studies to design and optimize. They successfully grew 8-inch n-type silicon carbide single crystal ingots with a thickness of up to 27 millimeters and processed them into 8-inch silicon carbide substrates, thus successfully joining the 8-inch silicon carbide club.