Well-known American investor Warren Buffett's Berkshire Hathaway has continued to reduce its stake in BYD. Read More

The IGBT power module is mainly composed of IGBT chip, copper coated ceramic substrate (referred to as "DBC substrate", including upper copper layer, ceramic layer and lower copper layer), bonding wire, solder layer, heat dissipation substrate and so on. Read More

In most cases, we can directly tell that DUV LELE is much cheaper than EUV single exposure (SE). In addition, DUV LE4 is cheaper than EUV dual patterning. Although LELE requires additional steps compared to SE, there are also EUV system maintenance versus DUV system maintenance and energy consumption to consider. DUV LELE uses half the energy of EUV SE, DUV SADP about 2/3, and even DUV LE4 uses only 85% of the energy of EUV SE. Read More

Taiwan's semiconductor manufacturing company is exploring an advanced new way to package chips as the world's largest chipmaker races to keep up with demand for computing power driven by artificial intelligence.
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In general, BJT chooses (111) crystal orientation mainly because this crystal orientation is conducive to the diffusion of impurities and the formation of high-quality PN junction, while MOS devices choose (100) crystal orientation because of its lower surface state density, high electron mobility and better interface quality, which meets the needs of modern CMOS processes. The selection of different crystal orientations fully considers the working principle of the device, material characteristics and process compatibility. Read More

What are the effects of ion implantation on silicon wafers? During ion implantation, high-energy impurity ions accelerate the impact on the surface of the silicon wafer, converting its kinetic energy into thermal energy and displacement energy, causing the migration and rearrangement of silicon atom Read More